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| SEMICONDUCTOR MUSITECH R GT2181 Power Audio Transistor General Description Musitech's Audio series of Insulated Gate Bipolar Transistor provides linearity feature and low conduction losses. The Audio series is designed for applications such as Audio amplifiers where linearity is a required feature. Features * * * * Excellent linearity Low saturation voltage : VCE(sat) = 2.5 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 120ns (typ.) Applications High performance audio systems, Car amplifier, Active Speaker,Sub-woofer. C G G C E E TO-264 TC = 25C unless otherwise noted Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF I FM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C GT2181 200 20 20 15 60 15 60 180 78 -55 to +150 -55 to +150 300 Units V V A A A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.69 1.1 40 Units C/W C/W C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. (c) 2006 Musitech Semiconductor Corporation 1 GT2181 Rev: A www..com Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 200 ----0.23 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 10mA, VCE = VGE IC = 10A, VGE = 15V IC = 20A, VGE = 15V 2.5 ----1.2 2.5 4.0 2.3 3.8 V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 20V, VGE = 0V, f = 1MHz ---1105 310 96 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------20 68 89 24 450 300 190 32 88 167 91 560 110 361 33 8 18 11 -- ----301 --- --- 580 - - --ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 150 V, IC = 10A, RG = 10, VGE = 10V, Inductive Load, TC = 25C VCC = 150 V, IC = 10A, RG = 10, VGE = 10V, Inductive Load, TC = 125C VCE = 150 V, IC = 10A, VGE = 10V Measured 5mm from PKG Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge C = 25C unless otherwise noted Test Conditions TC = 25C IF = 20A TC = 100C TC = 25C TC = 100C IF = 20A, di/dt = 200A/us TC = 25C TC = 100C TC = 25C TC = 100C Min. --------- Typ. 1.2 1.0 120 210 7.4 9.5 750 1120 Max. 1.5 --- ----- Units V ns A nC CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. (c) 2006 Musitech Semiconductor Corporation 2 GT2181 Rev:A www..com 500 500 100 I C MAX. (Pulsed) IC MAX. (Continuous) 100 Collector Current, I C [A] 10us 100us DC Operation 1 10 Collector Current, IC [A] 10 1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 1 Safe Operating Area VGE =20V, T C=100 C 0.1 1 10 100 1000 o 0.1 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 1. SOA Characteristics Fig 2. Turn-Off SOA Characteristics 1 0.5 Thermal Response, Zthjc [/W] 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 3. Transient Thermal Impedance of IGBT 10 Common Emitter RL=15 (Tc=25 ) 150V 6 100V Vcc=75V 4 Gate-Emitter Voltage, V GE (V) 8 2 0 0 20 40 60 80 Gate Charge, Qg (nC) Fig 4. Gate Charge Characteristics (c) 2006 Musitech Semiconductor Corporation 3 GT2181 Rev: A www..com Package Dimensions TO-264 Package Outline Unit: mm 20.00 + 0.20 (1.00) (4.60) 6.00 + 0.20 - (2.00) (R 1.2 0) (2.00) + 0.10 - 2.50 + 0.20 - 3.00 + 0.20 +0.25 1.00 - 0.10 20.00 + 0.50 - 2.50 20.00 + 0.20 - (R 2. 30 ) 5.45TYP [5.45 + 0.30 ] - (0.20) 3.30 + 0.2 - 0 5.45TYP [5.45 + 0.30 ] - 0.60 - 0.10 +0.25 2.50 + 0.30 - 5.00 + 0.20 - Data and specifications subject to change without notice. This product has been designed and qualified for the audio amplifiers market. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. (c) 2006 Musitech Semiconductor Corporation (2.50) 4 GT2181 Rev: A |
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